RESEARCH AND DEVELOPMENT TO OBTAIN SEMICONDUCTOR DIODES FOR ELECTRONIC TUNING.
Interim engineering rept. no. 3, 27 Dec 63-26 Mar 64.
PHILCO CORP LANSDALE PA
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The guard-ring structure offers significant advantages over the double-epitaxial-layer structure. Using the guard-ring structure, plus processing changes to lower the electrical field at the periphery of the junction, has resulted in a significant increase in the level of breakdown voltage attained in diodes. The feasibility of fabricating large-area planar sili con diodes which meet all of the objective electrical specifications for Devices A and B has been conclusively established. Because of the inherent advantages of the planar process, diodes made by this refined planar process are superior to devices made by other technologies. Author