Accession Number:

AD0602027

Title:

RESEARCH AND DEVELOPMENT TO OBTAIN SEMICONDUCTOR DIODES FOR ELECTRONIC TUNING.

Descriptive Note:

Interim engineering rept. no. 3, 27 Dec 63-26 Mar 64.

Corporate Author:

PHILCO CORP LANSDALE PA

Personal Author(s):

Report Date:

1964-03-26

Pagination or Media Count:

56.0

Abstract:

The guard-ring structure offers significant advantages over the double-epitaxial-layer structure. Using the guard-ring structure, plus processing changes to lower the electrical field at the periphery of the junction, has resulted in a significant increase in the level of breakdown voltage attained in diodes. The feasibility of fabricating large-area planar sili con diodes which meet all of the objective electrical specifications for Devices A and B has been conclusively established. Because of the inherent advantages of the planar process, diodes made by this refined planar process are superior to devices made by other technologies. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE