Accession Number:

AD0601955

Title:

PRODUCTION ENGINEERING MEASURES TO INCREASE TRANSISTOR RELIABILITY. PROCESS SPECIFICATIONS. 2N744 SERIES.

Descriptive Note:

Final engineering rept., item 3

Corporate Author:

TEXAS INSTRUMENTS INC DALLAS

Personal Author(s):

Report Date:

1964-06-30

Pagination or Media Count:

49.0

Abstract:

Process specifications and methods for the manufacture of transistors of increased reliability are outlined. Topics in the report include 1 HCL etching of epitaxial substrates 2 measuring silicon epitaxial film thickness, I. R. Spectrophotometer method 3 measuring silicon epitaxial resistivity 4 cleaning slices, silicon organic removal, Walking Beam Machine method 5 depositing Boron B203 Box slices, silicon planar 6 operating dryer system, Kemp model 15 EM-1 7 depositing ammonium phosphate emitter slices, silicon planar 8 purifying KMER, silicon transistors 9 cleaning and drying prephoto resist slices, silicon 10 exposing photo resist coated slices 11 developing slices, silicon exposed, KMER coated 12 mixing solution, Bell Etch No. 2-A 13 metalizing gold collector slice, silicon planar 14 alloying contacts infrared silicon and 15 Header-TO-18.025 Post.

Descriptors:

• *TRANSISTORS
• MANUFACTURING
• EPITAXIAL GROWTH
• COATINGS
• CLEANING
• QUALITY CONTROL
• SPECIFICATIONS
• PROCESSING
• BORON
• SILICON
• SPECTROPHOTOMETERS
• RELIABILITY(ELECTRONICS)
• SEMICONDUCTOR DEVICES
• FILMS
• THICKNESS
• ELECTRICAL RESISTANCE

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE