PRODUCTION ENGINEERING MEASURES TO INCREASE TRANSISTOR RELIABILITY. PROCESS SPECIFICATIONS. 2N744 SERIES.
Final engineering rept., item 3
TEXAS INSTRUMENTS INC DALLAS
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Process specifications and methods for the manufacture of transistors of increased reliability are outlined. Topics in the report include 1 HCL etching of epitaxial substrates 2 measuring silicon epitaxial film thickness, I. R. Spectrophotometer method 3 measuring silicon epitaxial resistivity 4 cleaning slices, silicon organic removal, Walking Beam Machine method 5 depositing Boron B203 Box slices, silicon planar 6 operating dryer system, Kemp model 15 EM-1 7 depositing ammonium phosphate emitter slices, silicon planar 8 purifying KMER, silicon transistors 9 cleaning and drying prephoto resist slices, silicon 10 exposing photo resist coated slices 11 developing slices, silicon exposed, KMER coated 12 mixing solution, Bell Etch No. 2-A 13 metalizing gold collector slice, silicon planar 14 alloying contacts infrared silicon and 15 Header-TO-18.025 Post.