PRODUCTION ENGINEERING MEASURES TO INCREASE TRANSISTOR RELIABILITY. 2N744.
Final rept., item 3, 1 May 62-31 Oct 63
TEXAS INSTRUMENTS INC DALLAS
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Several process improvements and refinements were incorporated into the manufacturing cycle of the NPN silicon planar 2N744 transistor. Improvements were realized in the areas of epitaxial material, slice cleanliness prior to high temperature processing, control of both base and emitter diffusions, photo-resist pattern definition and control, control, package, and collector contacts. The device reliability level at the start of the contract was determined to be 4.21000 hrs with a 90 confidence level. The program objective failure rate of 0.0011000 hours at 5 of rated power has been met. The estimated failure rate with a 90 confidence limit at the end of the contract period was 0.000321000 hours. Author