Accession Number:

AD0601915

Title:

DEVELOPMENT AND FABRICATION OF A 5 KMC ELECTROCHEMICAL SWITCHING TRANSISTOR

Descriptive Note:

Final rept. for 15 Jan 1961-14 Apr 1962

Corporate Author:

PHILCO CORP LANSDALE PA

Personal Author(s):

• Schmechel, Donald M.

Report Date:

1962-04-14

Pagination or Media Count:

35.0

Abstract:

The report describes the theoretical and experimental investigations which were performed to fabricate a germanium transistor exhibiting an f sub t of 5 Kmcsec. Standard electrochemical methods with some necessary modifications were employed to fabricate the transistors. The intrinsic f sub t of the fabricated transistor was determined to be 5 Kmc or greater but, due to an electrical interaction between the passive elements in the transistor and the TO-18 enclosure, useful measurement of this quantity could not be made. Recommendations are made for future work involving investigation of the influence of f sub t on switching speeds, more accurate definition of relationship between measured f sub t and device parameters, development of advanced transistor structures, and design and construction of a suitable enclosure for high speed devices.

Descriptors:

• *ELECTRONIC SWITCHES
• SEMICONDUCTOR DEVICES
• CONSTRUCTION
• CONTAINERS
• ETCHED CRYSTALS
• CRYSTAL GROWTH
• TRANSISTORS
• ELECTROCHEMISTRY
• GERMANIUM

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE