DEVELOPMENT AND FABRICATION OF A 5 KMC ELECTROCHEMICAL SWITCHING TRANSISTOR
Final rept. for 15 Jan 1961-14 Apr 1962
PHILCO CORP LANSDALE PA
Pagination or Media Count:
The report describes the theoretical and experimental investigations which were performed to fabricate a germanium transistor exhibiting an f sub t of 5 Kmcsec. Standard electrochemical methods with some necessary modifications were employed to fabricate the transistors. The intrinsic f sub t of the fabricated transistor was determined to be 5 Kmc or greater but, due to an electrical interaction between the passive elements in the transistor and the TO-18 enclosure, useful measurement of this quantity could not be made. Recommendations are made for future work involving investigation of the influence of f sub t on switching speeds, more accurate definition of relationship between measured f sub t and device parameters, development of advanced transistor structures, and design and construction of a suitable enclosure for high speed devices.
- Electrical and Electronic Equipment