PRODUCTION ENGINEERING MEASURE. ITEM 9 SILICON GROWN DIFFUSED TRANSISTOR TYPE 2N336.
Final rept., 30 Apr 62-30 Apr 64.
GENERAL ELECTRIC CO SYRACUSE N Y
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Presented are the improved passivation and encapsulation techniques as well as the evaluation of the effectiveness of these techniques, the reliability estimate as a function of stress and a multi-level high reliability specification which characterizes the device for high reliability applications. The expected failure rate, at the upper 90 confidence limit as extrapolated using least square techniques and the Arrhenius failure model, is shown to be 0.01 per 1000 hours operation at 235 mw at 25C ambient temperature. As a result of this work a multi-level high reliability device specification has been written about this production line. This specification and the qualification testing to it are included in this report. Author