VAPOR DEPOSITED BORIDES OF GROUP IVA METALS.
Technical Information series,
GENERAL ELECTRIC CO PHILADELPHIA PA MISSILE AND SPACE DIV
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The formation of vapor deposited TiB2, ZrB2 and HfB2 at 1400C was studied with respect to the influence of process variables on structure and stoichiometry. Stoichiometric, non-porous deposits of TiB2 were obtained ZrB2 and HfB2 deposits contained beta rhombohedral boron. Precision lattice parameters were determined for all three diborides. The effect of co-deposited boron on these parameters appears to be slight. A small degree of preferred orientation existed in materials made under these conditions which indicates that crystallites tend to be deposited with c axes parallel to the substrate. Grain size, orientation, porosity and stoichiometry are all influenced and therefore should be controllable by process variation. Author