FAILURE MECHANISMS IN SILICON SEMICONDUCTORS.
Quarterly rept. no. 4, 30 Nov 63-29 Feb 64,
SHOCKLEY TRANSISTOR DIV CLEVITE TRANSISTOR PALO ALTO CALIF
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Investigations were made of surface phenomena on oxideprotected silicon devices. The problem of surface breakdown is considered. Surface breakdown voltage can be altered by supplying charge to surface states either by illumination or field effect. Junctions with anomalous local regions are investigated, showing spots of high sensitivity to light. SiO2 resistance was measured. A resistance drift was observed, with a time constant of approximately fifteen minutes. Investigations were made of current concentrations in silicon power transistors when thermally induced breakdown is produced second breakdown phenomenon. Most emphasis was put on transistors which exhibited low contact resistance between aluminum contact and emitter silicon. Two types of transistors were investigated Those which showed second breakdown at spots of elevated temperatures hot spots, and those which showed second breakdown at spots initially not included in areas of elevated temperatures. Author