FAILURE MECHANISMS IN MICROELECTRONICS.
Quarterly rept. no. 3
WESTINGHOUSE DEFENSE AND SPACE CENTER BALTIMORE MD
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A specific microelectronic linear amplifying block, was chosen as the representative device for detailed examination. A description is given of the block and its performance characteristics indicated. A type of failure of isolation in the block was identified, and the mechanism responsible is described. The mechanism appears to be partially related to inequities in diffusion of dopant during the first diffusion. Correlation between photovoltage and the unsuitable region on the device is described. A re-analysis and confirmation of the relation between reverse breakdown voltage and junction depth indicates that the effect of layers of oxide left on the silicon just before diffusion, through variations of the photoetch procedure, is to provide slight additional source strength in the diffusion, and therefore a slightly greater reverse breakdown voltage. Author