THE IMPROVEMENT OF PRODUCTION TECHNIQUES TO INCREASE THE RELIABILITY OF DIFFUSED SILICON CONTROLLED SWITCHES TYPES 2N689.
Quarterly progress rept. no. 3, 1 Jan-31 Mar 64,
GENERAL ELECTRIC CO AUBURN N Y
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This report covers the work performed on the device package, the all-diffused silicon controlled rectifier subassembly, the determination of consequences upon electrical behavior of dislocation-impurity interaction in all-diffused silicon, and the results of blocking voltage step-stress tests conducted on the present alloy-diffused product. Author