DEVELOPMENT OF EPITAXIAL TECHNOLOGY FOR MICROELECTRONICS AND LARGE AREA DEVICE APPLICATION.
Quarterly rept. no. 8, 1 Feb-30 Apr 64,
SYLVANIA ELECTRIC PRODUCTS INC WOBURN MASS
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Experiments were carried out in conjunction with the study of arsine doping, CO2 in situ oxide film growth, and oxidemasked growth. The furnace with rotating susceptor was re evaluated with much more favorable results than previously obtained. Capacitance probe measurement has proven a very valuable technique, useful for the study of layer doping profile, isolation junctions and back diffusion in epitaxial layers for digital circuits has been obtained, and a preliminary study was conducted on the requirements of epitaxial layers for linear circuits. A separate but smaller effect on silicon thin film deposition on ceramic substrates was made, with no major technical breakthroughs in sight. Author