AN L-BAND TUNNEL DIODE OSCILLATOR.
Quarterly progress rept. no. 7, 1 Dec 63-29 Feb 64,
RADIO CORP OF AMERICA HARRISON N J
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A standard process for fabricating 600 ma gallium arsenide tunnel diodes was evolved. A simplified rf circuit was developed which simplifies packaging in a small volume. A new transistor current regulator for TDOs was given preliminary test. The major objective is improved operation over a wide ambient temperature range. A transistor modulator for FM modulating the TDO was fabricated. The unit meets the required pulse width and repetition frequency for the specified values of control resistance. Author