500 C SILICON CARBIDE RECTIFIER PROGRAM.
Interim technical progress rept. no. 10, 1 Jan-31 Mar 64,
WESTINGHOUSE RESEARCH LABS PITTSBURGH PA
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The various stations of a pilot line are described. As much of the processing as possible is done in controlled atmosphere dry boxes. The design of the new sublimation furnace was completed and it is being fabricated. Further development work is being carried out on the crystal growth phase of the program. With the addition of graphite felt to the furnace as an insulating material, pump down time was materially re duced. Progress is being made on the solid doping technique for aluminum and p and n type junctions are being grown. Author