DETAILED STUDY OF DELETERIOUS EFFECTS ON SILICON TRANSISTORS.
MOTOROLA INC PHOENIX ARIZ
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Deleterious surface phenomena such as junction leakage current, junction breakdown voltage, current gain degradation, etc. observed on n-p-n. p-n-p silicon transistors insulated gate unipolar field effects transistors and surface controlled bipolar transistors are described in detail. The models fitting the surface phenomena observed are presented. Also brief discussion of application of surface phenomena are included. Author