Accession Number:

AD0600875

Title:

DETAILED STUDY OF DELETERIOUS EFFECTS ON SILICON TRANSISTORS.

Descriptive Note:

Corporate Author:

MOTOROLA INC PHOENIX ARIZ

Personal Author(s):

Report Date:

1964-04-01

Pagination or Media Count:

47.0

Abstract:

Deleterious surface phenomena such as junction leakage current, junction breakdown voltage, current gain degradation, etc. observed on n-p-n. p-n-p silicon transistors insulated gate unipolar field effects transistors and surface controlled bipolar transistors are described in detail. The models fitting the surface phenomena observed are presented. Also brief discussion of application of surface phenomena are included. Author

Descriptors:

• *SILICON
• SURFACES
• TRANSISTORS
• ELECTRIC CURRENT
• OXIDES
• VOLTAGE
• GAIN
• STATIC ELECTRICITY
• CONTAMINATION
• RELIABILITY

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE