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Accession Number:
AD0600725
Title:
THE PREPARATION AND PROPERTIES OF THIN FILMS OF SEMICONDUCTORS.
Descriptive Note:
Final rept.,
Corporate Author:
KANSAS STATE UNIV MANHATTAN
Report Date:
1964-03-01
Pagination or Media Count:
114.0
Abstract:
Thin films of InSb were prepared by the vacuum evaporation of the compound onto glass substrates. Irreversible changes which took place in the electrical conductivity and Hall coefficient during film annealings, and differences between the diffraction patterns of annealed and unannealed films were examined in detail. Surface replicas of both annealed and unannealed films were photomicrographed. Galvanomagnetic properties of annealed films -- notably the temperature dependence of the conductivity, the Hall coefficient, and the mobility -- were compared with the same properties in bulk material. Author
Distribution Statement:
APPROVED FOR PUBLIC RELEASE