Accession Number:

AD0600696

Title:

CAPACITANCE-VOLTAGE DEPENDENCE OF ZINCDIFFUSED GAAS P-N JUNCTIONS.

Descriptive Note:

Corporate Author:

AEROSPACE CORP EL SEGUNDO CALIF

Personal Author(s):

• Aukerman,L. W.
• Kyser,D. F.
• Millea,M. F.

Report Date:

1964-06-01

Pagination or Media Count:

29.0

Abstract:

The capacitance-voltage behavior of zinc-diffused GaAs p-n junctions indicates a severe non-linearity of the impurity distribution near the junction. This is probably due to the nonFickian nature of zinc diffusion in GaAs. The capacitance of zinc-diffused GaAs p-n junctions varies as Coc V .1n where the n values range from 2, as for an abrupt junction, to 3, as for a linear gradient junction. The capacitance-voltage relations for two assumed zinc profiles are calculated and compared with experimental results. A linear gradient on the p-side and a constant donor concentration equal to the starting donor concentration on the n-type side are found to be a good approximation of the actual impurity distribution at a zincdiffused p-n junction. Author

Descriptors:

• *TRANSISTORS
• *SINGLE CRYSTALS
• IMPURITIES
• ARSENIDES
• GALLIUM COMPOUNDS
• SEMICONDUCTOR DIODES
• ZINC
• CAPACITANCE
• VOLTAGE

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE