Accession Number:

AD0600142

Title:

TRANSISTOR CHARACTERIZATION AND DERATING FOR SECOND BREAKDOWN.

Descriptive Note:

Corporate Author:

ARMY ELECTRONICS LABS FORT MONMOUTH N J

Personal Author(s):

Report Date:

1964-01-01

Pagination or Media Count:

17.0

Abstract:

Two modes attributing to secondary breakdown in transistors have been found - the current and voltage modes. Localized spots due to current constriction as a result of either mode causes an exponential rise in thermal resistance prior to secondary breakdown. These localized secondary breakdown spots have been calculated to be between 900 - 1100 C in silicon. The study indicates that the maximum secondary breakdown power is a function of the device design and should be considered in light of other device performance requirements. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE