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RESEARCH AND DEVELOPMENT OF LOCALIZED DEFECTS AND HOT SPOTS IN HIGH VOLTAGE PNPN INVERTER SWITCHES.
Quarterly progress rept. no. 1, 1 Jun-1 Sep 66.
GENERAL ELECTRIC CO AUBURN NY SEMICONDUCTOR PRODUCTS DEPT
Pagination or Media Count:
This report deals with the research and development conducted during the investigation of localized defects and hot spots in high voltage p-n-p-n inverter switches. Precipitation in silicon, poisoning phenomena, gold diffusion irregularities, spiking, and resistivity changes, all of which are related to the problem of developing high-voltage, high-speed switches, are discussed, as well as current construction due to the design of a p-n-p-n structure.
APPROVED FOR PUBLIC RELEASE