Accession Number:

AD0489530

Title:

RESEARCH AND DEVELOPMENT OF LOCALIZED DEFECTS AND HOT SPOTS IN HIGH VOLTAGE PNPN INVERTER SWITCHES.

Descriptive Note:

Quarterly progress rept. no. 1, 1 Jun-1 Sep 66.

Corporate Author:

GENERAL ELECTRIC CO AUBURN NY SEMICONDUCTOR PRODUCTS DEPT

Personal Author(s):

Report Date:

1966-06-01

Pagination or Media Count:

50.0

Abstract:

This report deals with the research and development conducted during the investigation of localized defects and hot spots in high voltage p-n-p-n inverter switches. Precipitation in silicon, poisoning phenomena, gold diffusion irregularities, spiking, and resistivity changes, all of which are related to the problem of developing high-voltage, high-speed switches, are discussed, as well as current construction due to the design of a p-n-p-n structure.

Descriptors:

• *THERMAL STABILITY)
• (*INVERTERS
• TRANSISTORS)
• (*TRANSISTORS
• CRYSTAL DEFECTS
• SILICON
• CHEMICAL PRECIPITATION
• GOLD
• DIFFUSION
• ELECTRICAL RESISTANCE
• IMPURITIES
• PHOSPHORUS
• ELECTRICAL PROPERTIES

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE