HIGH SPEED POWER AMPLIFIER USING AN ELECTRON SWITCHED P-N JUNCTION.
Quarterly interim development rept. no. 5, 27 May-27 Aug 66,
TUNG-SOL ELECTRIC INC LIVINGSTON NJ CHATHAM ELECTRONICS DIV
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The effort for this report was placed upon the fabrication and processing of silicon diodes into an envelope containing the diode and electron gun, and the evaluation of the resultant Electron Beam Multiplier device. Six separatie devices were built and evaluated during this period. The results indicate that there are two major problem areas 1 The deterioration of the electrical characteristics of the silicon diode during both wafer to header bonding and tube processing. 2 Obtaining an improved electrical gain.
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