CRYOELECTRIC RANDOM ACCESS MEMORY - PHASE III. VOLUME II.
Final rept. 1 Mar 64-31 Aug 65,
RCA LABS PRINCETON NJ
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This report is Vol. II of a two-volume final report covering the third and final phase of a program for the development of a large capacity random access cryoelectric memory. This volume deals principally with experimental studies that were undertaken on the cryoelectric memory, and with the details of its fabrication. These studies have shown that the continuous film memory, although readily fabricated, does not have wide enough tolerances for the drive currents required for array operation to be useful in a complete computer system. However, it is shown that a geometrically more complex cell, namely the bridge cell does provide wide operating tolerances and permits the fabrication of integrated planes that have an overall net tolerance of greather than or - 20. The bridge cell can be used in both word organized and bit organized memory arrays. In addition to cell studies, careful tests were made on cryotron trees for use in addressing cryoelectric cell arrays. These experiments have shown that there are no serious problems associated with cryotron treees, providing careful design of the various levels on the trees are carried out. Fabrication details applicable to both continuous film memories and bridge cell arrays are given. Test equipment for testing all types of cryoelectric memories are described and other related work on the ryotron is presented. The techniques of fabrication are shown to be adequate for extending cryoelectric memories to large-size useful arrays with further work oriented toward plane production on a prototype scale. Author
- Computer Hardware