RELIABILITY PHYSICS STUDIES ON TRANSISTORS.
Quarterly rept. no. 3, 1 May-31 Jul 65,
ITT SEMICONDUCTOR PRODUCTS LABS PALO ALTO CA
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The first part of this report describes continued investigations of two surface failure modes, namely surface breakdown phenomena in silicon planar devices, and effects of mobile surface ions located on silicon oxide surfaces. Calculations are presented concerning the influence of nonequilibrium carriers on the breakdown voltage of a reverse biased diode, and a tentative model is investigated aiming at explaining the IMIB effect. The investigations of mobile surface ions were concentrated on measurements of the accumulation and the decay of surface ions as a function of time and position as to the junction. The influence of chemical treatment has been studied in detail. Measurement parameters were oxide thickness, oxide preparation, and temperature. The results have a direct bearing on the reliability of MOS structures and oxide protected devices. The second part of this report describes further investigations of the second breakdown phenomenon in silicon power transistors, simplified transistor structures and diodes. The conditions for the appearance of second breakdown in diodes are demonstrated.
- Electrical and Electronic Equipment
- Manufacturing and Industrial Engineering and Control of Production Systems