ION IMPLANTATION JUNCTION TECHNIQUES.
Quarterly technical progress rept. no. 1, 26 Jan-30 Apr 66,
ION PHYSICS CORP BURLINGTON MA
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The program is directed at optimization of the ion implantation method of fabricating solar cells from dendritic silicon for systems applications. During this quarter efforts were primarily concerned with demonstrating that useful cell configurations can be made which include the dendrites as active material. Cells of this type were made with efficiencies as high as 9.4 AMO. Preliminary investigations were conducted on reflecting back cells and an optimized antireflective coating for coverslipped cells has been developed. A small investigation was conducted on applying integral coverslips by reactive sputtering and some evaluation cells were made with the previously developed high vacuum sputtered coverslips.
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