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SOLID STATE PHASE SHIFTER.
Final rept. Apr 65-Feb 66,
MICRO STATE ELECTRONICS MURRAY HILL NJ
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This report describes the research activity on PIN diodes and the development of an X-band phase shifter technique. PIN diodes were developed with a resistance of less than 1 ohm at 100 ma forward current, junction capacitance of less than 12 pf, and reverse breakdown voltages of greater than 700 volts. The phase shifter developed gave 360 deg of phase shift in 26 equal steps, was tested at 5 kw of peak power and 20 watts of average power, and had 2.8 db of loss. The phase shifter required only 1 PIN diode per phase shift step and would switch in less than 100 nanoseconds. Author
APPROVED FOR PUBLIC RELEASE