BASIC MECHANISMS OF TRANSIENT RADIATION EFFECTS IN THE THIN FILM TRANSISTOR.
HUGHES AIRCRAFT CO FULLERTON CA GROUND SYSTEMS GROUP
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This program includes studies of active device intrinsic response and has as its broad objective the study of this intrinsic response for the majority carrier thin-film transistor. For this study fundamental solid state behavior is described in terms of active device circuit parameters and leads ultimately to radiation hard circuit design by manipulation of device design parameters.
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