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BURNOUT RESISTANT X BAND HOT CARRIER DETECTORS.
Quarterly rept. no. 3, 1 Jan-31 Mar 66,
MSI ELECTRONICS INC RICHMOND HILL NY
Pagination or Media Count:
Gold with N type impurity alloyed into high resistivity N type silicon produced junctions which are best understood in terms of the Schottky Barrier model. As video detectors of square wave modulated microwave energy at 9.3 GHz, .001 in. diameter junction of N on N showed a TSS of -43 DBM with forward bias. With reverse bias, the same junction showed reversal in sign of the detected output with lower sensitivity. Epitaxial regrowth N on N junctions also showed the same reversal. The regrowth devices were generally less sensitive than the alloyed metal on semiconductor devices. Author
APPROVED FOR PUBLIC RELEASE