Accession Number:

AD0483559

Title:

DEVELOPMENT OF A 1 WATT, 2 GHZ SILICON UHF POWER TRANSISTOR.

Descriptive Note:

Quarterly rept. no. 2, 1 Nov 65-31 Jan 66,

Corporate Author:

RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES

Personal Author(s):

Report Date:

1966-06-01

Pagination or Media Count:

20.0

Abstract:

The influence of epitaxial layer material and shallow diffusions on microwave device performance is studied. Results of these investigations obtained to date reveal that The use of thin epitaxial material yields devices with improved current handling capability and decreased gain-bandwidth product fall-off with current. Shallow diffusion depths permit the use of narrow base widths which possess a punch-through voltage that is compatible with the collector-base breakdown voltage of the device. Decreased base push-out with a subsequent improvement in base width control has been achieved. Initial results obtained from diffusion runs incorporating the Sequential Single Site process have confirmed the anticipated difficulties associated with this process. Preliminary evaluation of a photomasking technique designed to eliminate these alignment difficulties has proved that the technique is feasible. Evaluation at 1 gigahertz of thin epitaxial, shallow diffused devices mounted in various packages has revealed a superior performance for the coaxial packaged units when compared with TO-39 and TO-46 packaged units.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE