LOW-NOISE L-BAND (WIDEBAND) TRANSISTOR AMPLIFIER.
Quarterly technical rept. no. 7, 1 Dec 65-28 Feb 66,
TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV
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This report summarizes the work done from 1 December 1965 to 28 February 1966 in the design and development of an octave bandwidth 1-2 GHz transistor amplifier. The report covers device characterization, amplifier matching network design and directional coupler design. Noise figure data, optimum source admittance for minimum noise figure, and Y-parameters are presented for the L-148 transistor. The device noise figure ranges from less than 3.0 dB at 1 GHz to less than 4.5 dB at 2.0 GHz. Optimizing source admittance for minimum noise figure, rather than gain, causes about 1 dB mismatch loss at the input. Maximum gain with Yg opt is 10 dB at 1 GHz and 6 dB 6 dB at 2 GHz. Y-parameters were calculated from measured 50 ohms Scattering parameters using a Rantec automatic immittance plotter. The gains calculated using the Y-parameters show fairly good correlation with measured gains. A graphical presentation of transducer gain vs load and frequency was developed this quarter. It is shown that contours of constant transducer gain are circles in the complex admittance plane whether in rectangular coordinate or as a Smith chart. Measurements on the printed circuit board amplifiers are included. These are single stage amplifiers used to evaluate compensating networks at the input and output of the transistor no couplers were used.
- Electrical and Electronic Equipment