Accession Number:

AD0483028

Title:

GUNN EFFECT DEVICES.

Descriptive Note:

Quarterly technical rept. no. 1, 15 Nov 65-14 Feb 66,

Corporate Author:

HEWLETT-PACKARD LABS PALO ALTO CA

Personal Author(s):

• Engelmann, R. W. H.

Report Date:

1966-03-01

Pagination or Media Count:

58.0

Abstract:

The circuit behavior of a semiconductor bulk device operating in the region of field-controlled negative conductivity is analyzed theoretically and experimentally. It is concluded that the external rf impedance to the device has a strong influence on the field-domain performance leading to three different operation modes 1 amplification, 2 domain-movement oscillations with limited external tuning, 3 negative-conductance oscillations with wide range tuning. The thermal performance of CW devices is analyzed for design purposes. Author

Descriptors:

• (*SEMICONDUCTOR DEVICES
• MICROWAVE OSCILLATORS)
• (*MICROWAVE OSCILLATORS
• ELECTRICAL CONDUCTIVITY)
• RADIOFREQUENCY
• L BAND
• S BAND
• C BAND
• X BAND
• K BAND
• V BAND
• ELECTRICAL IMPEDANCE
• PERFORMANCE(ENGINEERING)
• OPERATION
• ELECTRICAL PROPERTIES
• CRYSTAL DETECTORS
• SPECTRUM ANALYZERS
• OSCILLATION
• PIEZOELECTRIC CRYSTALS
• TUNING DEVICES

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE