MICROWAVE OSCILLATIONS IN BULK SEMICONDUCTORS.
Quarterly progress rept. no. 2, 1 Oct-31 Dec 65,
IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY
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Experiments on the heat treatment effects in oxygen grown GaAs have shown that the compensating acceptor present in the material is due to a chemical impurity which occurs during growth but is probably not the result of contamination by the crystal growth vessel. Electron microscope examination of both as grown and heat treated GaAs show no detectable difference between the two. The observed dislocation density is about 10 to the 5th power lines cm to minus 2, or, on the average, one line per device. A technique of fabrication of Gunn effect devices using a solution regrowth technique for making contacts to the bulk GaAs has been tried but so far yields a high resistance layer at the interface. Epitaxial devices have been operated as both pulsed and CW oscillators and devices fabricated from heat treated material having a positive temperature coefficient of resistivity have been operated CW with a power output of 57 milliwatt at 2.5 GHz with 1 efficiency. Author
- Electrical and Electronic Equipment