Accession Number:

AD0478538

Title:

GAAS LASER DIODES.

Descriptive Note:

Final rept. 1 Jul 64-30 Jun 65,

Corporate Author:

KORAD CORP SANTA MONICA CA

Personal Author(s):

• Sehr, R. A.
• Rundle, W. J.

Report Date:

1966-01-01

Pagination or Media Count:

30.0

Abstract:

Refinements in the experimental technique for growing p-n junctions from liquid solution resulted in highly uniform and dislocation-free n-layers on p-substrates. High pressure diffused laser diodes were fabricated with thresholds between 50 and 70 amperes at 300 degrees K, and typical power outputs of two watts with 50 nsec pulses and a repetition rate of 1000 pps. Some lasers, mounted on special headers containing a pulse transformer, were operated at 8000 pps with 100 nsec pulses producing a beam of 1.5 watt optical peak power within a beam angle of 12 degress. Author

Descriptors:

• *ARSENIC ALLOYS)
• *SEMICONDUCTOR DIODES)
• (*GALLIUM ALLOYS
• (*LASERS
• CRYSTAL GROWTH
• PRESSURE
• DIFFUSION
• SOLUTIONS(MIXTURES)
• DOPING
• ELECTRICAL PROPERTIES
• ELECTRICAL RESISTANCE
• HEATING
• ELECTROMAGNETIC PULSES

Subject Categories:

• Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE