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GAAS LASER DIODES.
Final rept. 1 Jul 64-30 Jun 65,
KORAD CORP SANTA MONICA CA
Pagination or Media Count:
Refinements in the experimental technique for growing p-n junctions from liquid solution resulted in highly uniform and dislocation-free n-layers on p-substrates. High pressure diffused laser diodes were fabricated with thresholds between 50 and 70 amperes at 300 degrees K, and typical power outputs of two watts with 50 nsec pulses and a repetition rate of 1000 pps. Some lasers, mounted on special headers containing a pulse transformer, were operated at 8000 pps with 100 nsec pulses producing a beam of 1.5 watt optical peak power within a beam angle of 12 degress. Author
APPROVED FOR PUBLIC RELEASE