Accession Number:

AD0478154

Title:

RADIATION EFFECTS ON THIN-FILM MICROELECTRONICS.

Descriptive Note:

Quarterly progress rept. no. 1, 15 Jul-15 Oct 65,

Corporate Author:

AUTONETICS ANAHEIM CALIF

Personal Author(s):

• Strahan,Virgil H.

Report Date:

1966-01-01

Pagination or Media Count:

40.0

Abstract:

This report describes the initial effort on the program to evaluate the effects of transient radiation on thin-film passive components. A 30 pf, Al-SiO-Al capacitor deposited on an alumina substrate has been irradiated by a 600 KEV FXR pulse both in air and in vacuum at a pressure of 5 x 10 to the 5th power mm. Also, irradiations were performed with a 0.1 cm sheet of lead between the capacitor and the source of x-rays. Results of the test indicate 1 the predominant effect in vacuum is net electron emission or absorption depending on the ratio of electrons to photons in the impinging radiation beam, 2 these effects are not symmetric within the capacitor that is, more electrons may be ejected or absorbed by one plate than by the other plate of the capacitor, and 3 in air the predominant effect is a radiation induced shunt resistance. A group of capacitors have been designed and are being fabricated to supply the necessary variations in parameters to separate the various effects. Author

Descriptors:

• *DAMAGE
• *CAPACITORS
• ALUMINUM COMPOUNDS
• OXIDES
• SILICON COMPOUNDS
• ELECTRONS
• PHOTONS
• IONIZATION
• DIELECTRIC PROPERTIES
• VACUUM APPARATUS
• VOLTAGE
• CERAMIC MATERIALS
• CERAMIC MATERIALS

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE