Accession Number:

AD0477749

Title:

DESIGN AND COMPENSATING TECHNIQUES INVESTIGATION FOR HIGH TEMPERATURE OPERATION OF P-SILICON PRESSURE TRANSDUCER.

Descriptive Note:

Final rept. 15 Jul 64-29 Mar 65,

Corporate Author:

SCHAEVITZ-BYTREX INC WALTHAM MA

Personal Author(s):

Report Date:

1965-11-01

Pagination or Media Count:

58.0

Abstract:

Theoretical study and experimental work indicate that a p-n junction type diffused semiconductor sensor is not feasible for high temperature operation above 600 F or 700 F. The generation of electron hole pairs destroys the isolation property of the p-n junction. Consequently, emphasis was shifted to work on the development of a semiconductor pressure transducer with bonded strain sensors. The bulk resistivity of the silicon sensor was established together with the technique of effecting a high temperature ohmic contact. A broad evaluation of the substrate materials was made before the final selection of a special tungsten allow stock for actual transducer fabrication. Prototype transducers were built and tested at temperatures above 1000 F. The data from temperature compensation experiments showed that the techniques and choice of materials will make high temperature pressure transducers which satisfy most of the requirements of the Statement of Work for this contract. Author

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE