DEVELOPMENT OF A 1 WATT, 2KMHZ SILICON UHF POWER TRANSISTOR.
Quarterly rept. no. 1, 1 Aug-31 Oct 65,
RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES
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Major effort was concentrated on experimental studies of the effects of epitaxial layer variations on microwave performance. These effects will significantly influence both the device surface and cross-sectional geometry and must be characterized before the required photomasks can be designed. The use of thin epitaxial layers 0.3 mil resulted in a decrease in fT fall-off with current and a 20 improvement in 1000 Mc amplifier performance. A median output power level of 1.2 watts was obtained using this thin material. Modification of the base diffusion profile resulted in devices having an increase in maximum fT. The proximity of the emitter sites to the P plus matrix was shown to significantly influence both DC and UHF device performance. Both a reduction in fT and 400 megacycle amplifier output power was observed with infringement of the emitter into the vicinity of the P plus matrix. An integral lead bonding technique is being developed for incorporation into the proposed device. An initial version of the proposed coaxial package has been assembled. Author
- Electrical and Electronic Equipment