Accession Number:

AD0475425

Title:

THE MEASUREMENT OF THE DISPLACEMENT ENERGY OF A LATTICE ATOM BY ELECTRON COLLISIONS IN A(III) B(V) COMPOUNDS.

Descriptive Note:

Edited translation,

Corporate Author:

FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OH

Personal Author(s):

• Bauerlein, R.

Report Date:

1965-10-18

Pagination or Media Count:

15.0

Abstract:

The density of lattice vacancies produced by bombardment of a semiconductor barrier layer element with high energy electrons was determined from the measurement of the short circuit current of the barrier layer element during the bombardment. Using this method of measurement the rate of production of lattice vacancies in InP, InAs and GaAs was investigated as a function of the primary energy of the bombarding electrons in the energy range between 100 and 500 keV. At any given time two energy thresholds, at which the displacement of lattice atoms occurs, were observed for the individual compounds. Values between 7 and 10 eV were obtained for the displacement energies determined in the manner described. Author

Descriptors:

• *SEMICONDUCTORS)
• (*CRYSTAL LATTICES
• ENERGY)
• (*ELECTRON IRRADIATION
• INDIUM ALLOYS
• PHOSPHORUS ALLOYS
• ARSENIC ALLOYS
• GALLIUM ALLOYS
• SOLID STATE PHYSICS
• MEASUREMENT

Subject Categories:

• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE