Accession Number:

AD0475397

Title:

COMPUTER SIMULATION OF THE SPUTTERING PROCESS.

Descriptive Note:

Master's thesis,

Corporate Author:

NAVAL POSTGRADUATE SCHOOL MONTEREY CA

Personal Author(s):

• Levy, Norman S.

Report Date:

1965-01-01

Pagination or Media Count:

53.0

Abstract:

The sputtering of Cu fcc 110, 100 and 111 surfaces by 1- to 10-keV A ions at normal incidence has been investigated by high-speed digital computer techniques. The interatomic repulsions are described by Born-Mayer potentials. The shape of the sputtering ratio curves are in close agreement with the data of Magnuson and Carlston. Ejection patterns in accord with experimental observations are predicted. There is evidence that the sputtering mechanism is not the result of momentum focusing. Author

Descriptors:

• (*SPUTTERING
• THEORY)
• (*DIGITAL COMPUTERS
• SIMULATION)
• (*SIMULATION
• SPUTTERING)
• COPPER
• VOLTAGE
• CRYSTAL STRUCTURE
• CRYSTAL LATTICES
• ION BOMBARDMENT
• ARGON
• COMPUTER PROGRAMMING
• PROGRAMMING LANGUAGES
• KINETIC ENERGY
• SYMMETRY(CRYSTALLOGRAPHY)

Subject Categories:

• Fabrication Metallurgy
• Computer Programming and Software
• Computer Hardware

Distribution Statement:

APPROVED FOR PUBLIC RELEASE