Accession Number:

AD0471867

Title:

DEVELOPMENT OF A REMOTE CUTOFF MOS FIELD EFFECT TRANSISTOR.

Descriptive Note:

Interim development rept. no.1, 10 May-10 Aug 65,

Corporate Author:

RADIO CORP OF AMERICA SOMERVILLE NJ ELECTRONIC COMPONENTS AND DEVICES

Personal Author(s):

Report Date:

1965-08-10

Pagination or Media Count:

49.0

Abstract:

The purpose of this program is to develop an advanced MOS field effect transistor having a tailored remote cutoff characteristic for decreasing cross modulation distortion and to provide improved AGC for communications receivers. The devices developed under this program are to be optimized for two frequency ranges 14 Kc to 30 Mc and 200 Mc to 400 Mc. The stepped oxide remote cutoff MOS is superior to the ordinary triode MOS for low cross-modulation distortion. The triode MOS is poor in the high attenuation region of the automatic gain control agc characteristics. In this region, the device is operated near cutoff. Initial samples of a continuously tapered oxide instead of stepped oxide have been tested and show promise. For the low frequency device, an investigation has been launched into the 1F noise characteristics of the MOS. Measurements of noise resistance and noise currents are in progress. There appears to be a wide variation in 1F noise characteristics in MOS transistors. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE