A METHOD FOR DETERMINING THE MAGNITUDE OF THE RAMAN SCATTERING MATRIX ELEMENT FOR DIAMOND-TYPE CRYSTALS.
PENNSYLVANIA UNIV PHILADELPHIA DEPT OF PHYSICS
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A discussion is presented of the mechanisms for the electric field induced first order infrared absorption band in diamond-type crystals. The strength of the induced band is determined by the dependence of the electronic polarization on relative atomic displacements in the unit cell. A measurement of the absorption constant of the induced band should therefore provide quantitative information about the first order Raman scattering matrix elements. The phenomenon of field induced infrared absorption bands should also exist for Raman active modes in other centrosymmetric crystal structures, and for Raman active impurity modes. Author