Accession Number:

AD0469962

Title:

DESIGN PARAMETERS AND PROCEDURES FOR FUNCTIONAL ELECTRONIC STRUCTURES.

Descriptive Note:

Technical rept. Jul 64-Jun 65.

Corporate Author:

RESEARCH TRIANGLE INST RESEARCH TRIANGLE PARK NC

Personal Author(s):

Report Date:

1965-09-01

Pagination or Media Count:

218.0

Abstract:

Experimental and theoretical research on silicon integrated device structures and on the elements of these structures is discussed. Included are a description of oxide film thickness measurement apparatus, data on low temperature silicon oxidation rates, observations on the dependence of oxide growth rate on phosphorus concentration in the silicon, and theoretical treatment of field effect transistor characteristics. The series of reports on Integrated Silicon Device Technology is described and their status given. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE