Accession Number:

AD0466611

Title:

BIAS INFLUENCE OF RADIATION-INDUCED TRANSISTOR SURFACE EFFECTS,

Descriptive Note:

Corporate Author:

NAVAL RADIOLOGICAL DEFENSE LAB SAN FRANCISCO CA

Report Date:

1965-07-22

Pagination or Media Count:

23.0

Abstract:

Tests were performed to determine the influence of bias on radiation induced surface effects in transistors. Sample groups of the similarly rated type 2N526 germanium and type 2N329A silicon alloy junction transistors were irradiated Cobalt 60 gamma exposure of 57,800 r under three conditions of bias application 1 Collector-base voltage and emitter current on continuously, 2 Collector-base voltage and emitter current applied intermittently and 3 Collector-base voltage on continuously with emitter current applied intermittently. Biasing variations 1 and 3 are two conditions of continuously-on bias while variation 2 represents a no bias condition in which the progression of radiation effects were measured. The transistor characteristics ICBO, beta and hie were measured before and throughout the irradiation. For each characteristic within each transistor type the estimated junction temperatures were essentially equal during measurements. Radiation induced surface effects, causing increases in ICBO, beta and hie, were clearly enhanced by the continuous presence of collector-base voltage in the Ge 2N526. While no clear correlation between voltage and effects was found in the Si 2N329A, it is probable that exposures at higher levels will show a bias influence. Author

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Distribution Statement:

APPROVED FOR PUBLIC RELEASE