Accession Number:

AD0462730

Title:

AN INVESTIGATION OF BASIC MECHANISMS OF TRANSIENT HIGH ENERGY RADIATION EFFECTS IN INSULATORS AND SEMICONDUCTORS.

Descriptive Note:

Annual rept. no. 3,

Corporate Author:

HUGHES AIRCRAFT CO FULLERTON CA GROUND SYSTEMS GROUP

Report Date:

1964-12-17

Pagination or Media Count:

65.0

Abstract:

This program was concerned with developing a thorough understanding, in solid state theory, of the effect produced in electronic materials by nuclear weapon radiation. The program was directed in such a way as to provide an answer to the following practical questions. Given a weapon time history, what are the physical processes and what are the mechanisms that determine their response time during and after exposure to pulsed high energy radiation. More specifically, it is important to determine the nature of that process, in a given material, either semiconductor or insulator, that is rate limiting, since, in general, the response will not be governed by a single simple process. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE