HIGH CURRENT TUNNEL DIODES FOR INVERTER CIRCUITS.
Final rept. 1 Dec 63-15 Mar 65,
RADIO CORP OF AMERICA SOMERVILLE NJ
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This program has demonstrated that tunnel diode inverters can be made to operate at efficiencies of up to 80 percent and power levels up to 200 watts output using GaAs tunnel diodes. It has shown that previously accepted theories of operation of saturated square hysteresis loop core Marzolf tunnel diode inverters do not adequately describe the performance of this type of inverter. A more adequate theory has been developed and refined to include second order effects such as squareness factors of the core, operating frequency, series resistance etc. The Marzolf inverter has been shown to be a simple, efficient, short circuit and overload proof device which has the added advantages of using active devices that are tolerant of high radiation and temperature levels, that have excellent power-to-weight ratios and that closely match the output of thermionic generators. The same principle of operation, as used in the Marzolf inverter, has been applied to a Bridge inverter circuit, which allows operation at input voltages of 0.6 to 1.2 volts. The adaptability of tunnel diode inverters to polyphase operations has been demonstrated with the operation of a Y-connected three phase inverter. Author