THIN FILM IMAGE CONVERTER.
Interim technical progress rept. no. 6, 24 Jul-23 Oct 64,
HONEYWELL RESEARCH CENTER HOPKINS MN
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Efforts were continued on a program to conduct fundamental studies of new approaches to image conversion. The emphasis has been upon evaluation of a concept of a solid state thin film image converter TFIC. Investigations of the epitaxial growth of n-GaAs on p-Ge have made it possible to prepare 200 micron thick layers of single crystal GaAs on Ge. An evaluation of the electrical properties of samples etched to a mesa configuration, together with chemical staining studies of angle lapped samples, reveal that an n-Ge layer is formed between the n-GaAs and p-Ge regions during the initial stages of growth. The most probable donor is As, diffused from the vapor into the Ge. Methods for preparing strong, ohmic, low resistance contacts to n-GaAs, p-GaAs, n-GaP, and p-GaP have been devised utilizing ultrasonic soldering. The best techniques are summarized. Author