Accession Number:

AD0453092

Title:

DEVELOPMENT OF EPITAXIAL TECHNOLOGY FOR MICROELECTRONICS AND LARGE AREA DEVICE APPLICATIONS.

Descriptive Note:

Quarterly rept. no. 10, 1 Aug-31 Oct 64,

Corporate Author:

SYLVANIA ELECTRIC PRODUCTS INC WOBURN MASS

Personal Author(s):

Report Date:

1961-06-01

Pagination or Media Count:

59.0

Abstract:

The purpose of this project is the continued investigation and improvement of silicon epitaxial technology in order to make its advantages available for use in microelectronic circuits. A study of first epitaxial layer thickness with variation of parameters controlling the second epitaxial layer in multilayer devices has thus far resulted in a fair agreement between experimental and theoretical results. Experimental determination of silicon source compounds and temperatures for an optimum low temperature epitaxial growth system has centered on SiBr4 as a promising system. Polycrystalline silicon deposits over SiO2 over silicon have been grown as thick as 8 mils, with excellent dimensional control. Growth of this type has also been accomplished in moat structures. Problems of warping of these Poly SiSiO2Si wafers are being attacked. These epitaxial techniques are all being developed for the fabrication of both opticallyactivated PNPN matrix structures and silicon monolithic integrated circuits containing both NPN and PNP bipolar transistors. Very encouraging results have been obtained in the growth of sizeable single crystal silicon films over sapphire, and PN junction structures fabricated therein show very good diode characteristics. Author

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE