THIN FILM IMAGE CONVERTER.
Interim technical rept. no. 5, 24 Apr-23 July 64,
HONEYWELL RESEARCH CENTER HOPKINS MN
Pagination or Media Count:
Electrical contacts to n-GaAs have been prepared by electroless Ni plating, Pt sputtering in an argon atmosphere, and ultrasonic soldering. The influence of heat treatment under vacuum and electrical forming upon the current-voltage characteristics has been investigated. It has been found possible to produce ohmic contacts by several of these methods. The intensity of electroluminescent emission from GaP as a function of injection current has been studied at 300 deg. K and 195 deg K. At low current densities the intensity is proportinal to the square of the current. As2S3 and CdS aplanatic hyperhemispheres have been mounted on a GaP diode, using an immersion oil. The external quantum efficiency increased by a factor of 1.3 to 2.6. Author