RESEARCH IN ELECTRON EMISSION FROM SEMICONDUCTORS..
Final rept., 1 May 63-30 Apr 64,
DAVID SARNOFF RESEARCH CENTER PRINCETON NJ
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A method of fabricating n-p-n junction emitters in silicon was developed. Attempts to find a method of producing a clean surface on these emitters was not successful. Emission measurements from cesium treated but uncleaned emitters indicate that 10 to the minus 6 of the incident electrons were emitted from a surface with a 2.4 ev electron affinity under dc conditions. Analysis of the voltage dependence of the emission indicates that the electron distribution in the junction is characterized by kTe .43 ev. The low emission probability is shown to be the result of the unclean surface. A method of producing an emitter with a clean surface is proposed. Spectral dependence of light emission is consistent with an electron temperature of 0.4 ev. Evidence in support of the negative electron affinity effect was obtained from photoemission measurements on cesium treated GaP. Author