C- AND KU-BAND SEMICONDUCTOR TR DEVICES
Quarterly progress rept. no. 3, 1 Jan-31 Mar 1964
MICROWAVE ASSOCIATES INC BURLINGTON MA
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This report was performed on the C-band portion. All work performed on the Ku-band investigation was concerned with full height Ku-band waveguide diode mounts. PIN and varactor diodes were measured using forward DC bias to simulate high power isolation and zero bias to provide the low loss condition. Additional work was carried out utilizing high burn out crystal detectors to provide the forward bias for the PIN and the varactor during high power tests. High power tests during this quarterly interval resulted in the successful operation of a two stage switched limiter. Operational data is given for peak powers up to 1,000 watts.
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