Accession Number:

AD0442491

Title:

OPTICAL ABSORPTION AND PHOTOLUMINESCENCE OF DOPED GAAS AND (INXGA1-X)AS,

Descriptive Note:

Corporate Author:

STANFORD UNIV CA STANFORD ELECTRONICS LABS

Personal Author(s):

• Chang, Chung M.

Report Date:

1964-04-01

Pagination or Media Count:

51.0

Abstract:

Absorption coefficients near the fundamental absorption edge have been measured in P-type and N-type GaAs with various doping concentrations. With the aid of the principle of detail balance, these measurements were used to predict the spectra of spontaneous emissions under small excitations, and actual photoluminescence spectra were found to follow the predicted spectra closely. The photoluminescence spectra of Mndoped GaAs at several different temperatures were studied. Indium was diffused into doped GaAs to modify the band-gap energy. The photoluminescence spectra and absorption coefficients of the diffused layers were measured. The photoluminescence of the diffused layer was found to be shifted in wavelength by an amount consistent with the indium surface concentration. Author

Descriptors:

• *LUMINESCENCE
• GALLIUM ALLOYS
• GALLIUM ALLOYS
• EMISSIVITY
• ARSENIDES
• LIFE EXPECTANCY(SERVICE LIFE)
• INDIUM
• MANGANESE
• IONIZATION
• NUCLEAR CROSS SECTIONS
• INFRARED SPECTRA
• VISIBLE SPECTRA
• ULTRAVIOLET SPECTRA
• RECOMBINATION REACTIONS

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE