DID YOU KNOW? DTIC has over 3.5 million final reports on DoD funded research, development, test, and evaluation activities available to our registered users. Click HERE
to register or log in.
THIN FILM IMAGE CONVERTER.
Interim technical progress rept. no 4, 24 Jan23 Apr 64,
HONEYWELL RESEARCH CENTER HOPKINS MN
Pagination or Media Count:
Details of the fabrication and evaluation of a Zn diffused, Te doped GaP diode are presented. The peak of the spectral emission lies at 7700 A at 297 K for a 200 mu amp bias current. With increasing bias the peak shifts to shorter wavelengths. A shift is also observed at 195 K. When operated at 77 K the spectral peak lies at 6600 A, independent of bias current. The relative intensity at 297 K and 195 K is a superlinear function of bias current at low currents. AT 77 K it is a linear function of current at low currents. GaAs on Ge heterojunctions have been prepared by an open tube technique utilizing a close-spaced transport system. Source and substrate are heated by tungsten lamps. X-ray analyses indicate that the initial growth of GaAs is epitaxial, but as deposition progresses a polycrystalline deposit is formed. A literature survey of the optical properties of GaAsxP1-x has been completed. Author
APPROVED FOR PUBLIC RELEASE