Accession Number:
AD0436787
Title:
THIN FILM TECHNIQUES FOR SILICON INTEGRATED CIRCUITS.
Descriptive Note:
Quarterly progress rept. no. 2, 15 Sep-15 Dec 63,
Corporate Author:
MOTOROLA INC PHOENIX AZ
Personal Author(s):
Report Date:
1963-12-15
Pagination or Media Count:
48.0
Abstract:
Circuit design and masks for the R-C circuit vehicle have been completed, as well as processing of the adapter network and special control pattern. Analysis of data and failure from the first run of the adapter are included. Processing of samples for Phase II is in progress. Further study is planned in the areas of contacting cermet resistors, deposition of nichrome, substrate cleanliness, aluminum silicate capacitor process and glow discharge anodization of capacitors. Author
Descriptors:
- *INTEGRATED CIRCUITS
- *CAPACITORS
- *RESISTORS
- *SILICON
- MATERIALS
- MATERIALS
- INTEGRATED CIRCUITS
- CERAMIC CAPACITORS
- CERMETS
- FILMS
- MANUFACTURING
- CIRCUIT INTERCONNECTIONS
- VOLTAGE
- IMPURITIES
- SEMICONDUCTOR DEVICES
- NICKEL ALLOYS
- CHROMIUM ALLOYS
- WIRE
- ALUMINUM COMPOUNDS
- SILICATES
- SILICON COMPOUNDS
- DIOXIDES
- ADHESION
- ALUMINUM
- TITANIUM
- TIN COMPOUNDS
- OXIDES
- TANTALUM COMPOUNDS
- MONOXIDES
- RHENIUM
- NITRIDES