MATERIAL PROCESSING AND PHENOMENA INVESTIGATIONS FOR FUNCTIONAL ELECTRONIC BLOCKS.
Interim Engineering rept. no. 5, 6 Sep-6 Dec 63,
WESTINGHOUSE ELECTRIC CORP PITTSBURGH PA
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Reproducibility studies on the fabrication of n -on-p layers, which are suitable for the base of p-n-p transistors, are progressing satisfactorily. The first n -on-p diode arrays have been produced and their electrical characteristics have been evaluated. The doping of anodic oxide films with boron was achieved. Judging from the analogy with the phosphorous system, it appears likely that complete control over the whole range of sheet resistances of interest will also be possible for p -on-n layers. The optical resolution of the two systems in use inverted microscope and stereo-zoom system has been examined in detail, and was found to be vaery satisfactory for the inverted microscope, but not quite satisfactory for the stereo-zoom system. Geometry controlled anodic oxide growth on n-type silicon under front surface illumination was studied with the stereo-zoom system, and a significant physical difference was found, as compared to back surface illumination. The apparatus for measurements of surface potential of anodized silicon has been further refined. Results that have been obtained to date are reviewed. Author