TRANSISTOR, VHF, SILICON, POWER (50W - 105MC).
Quarterly rept. no. 1, 1 July-30 Sep 63,
TRW SEMICONDUCTORS LAWNDALE CA
Pagination or Media Count:
The original design proposed on this contract was a stripe structure in a spiral configuration. The assembly and large area problems associated with the spiral configuration were straining present technology to a degree where a new configuration was necessary. The new design consists of 72 separate transistor cells connected in parallel by evaporated contacts. Diffusion and photoresist laboratory areas have been established and a set of processes have been put into operation. These processes are presently being adjusted to insure compatibility with the 50 watt device. Processing of initial samples of the 72 cell Double-Interrupted Emitter Structure has yielded the required number of units for the first six state-of-the-art devices. The 34 in. Disc Package was chosen for this device because of its better high-frequency characteristics and availability. Other problems in emitter diffusion and contact metallizing have been detailed and concentration of effort is in this direction. Author